Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-06-13
2006-06-13
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
Reexamination Certificate
active
07061009
ABSTRACT:
The present invention relates to a device having a solid conjugated semiconductor comprising a hole transport material (HTM), wherein the hole transport material is mixed with oxidized hole transport material as a dopant; to a mixture which can be used as doped hole transport material; and to methods for the preparation of devices having a solid conjugated semiconductor. The present invention also relates to a solar cell comprising such a device and to other devices made with conjugated semiconductors, such as diodes (LEDs), transistors etc.
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Aasmundveit K E et al: “Structural Aspects of Electrochemical Doping and Dedoping of Poly (3, 4-Ethylenedioxythiophene)” Synthetic Metals, Elsevier Sequoia, Lausanne, Ch, vol. 113, No. 1/2, 15 ISSN: 0379-6779.
Gaering Stephane
Haridas Karickal Raman
Nelles Gabriele
Schmidt Hans-Werner
Thelakkat Mukundan
Coleman W. David
Frommer William S.
Frommer & Lawrence & Haug LLP
Sony International (Europe) GmbH
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