Solid conjugated semiconductor device having an unmodified...

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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Reexamination Certificate

active

07061009

ABSTRACT:
The present invention relates to a device having a solid conjugated semiconductor comprising a hole transport material (HTM), wherein the hole transport material is mixed with oxidized hole transport material as a dopant; to a mixture which can be used as doped hole transport material; and to methods for the preparation of devices having a solid conjugated semiconductor. The present invention also relates to a solar cell comprising such a device and to other devices made with conjugated semiconductors, such as diodes (LEDs), transistors etc.

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patent: 6700058 (2004-03-01), Nelles et al.
patent: 2002/0070662 (2002-06-01), Moriyama et al.
patent: 197 11 713 (1998-10-01), None
Aasmundveit K E et al: “Structural Aspects of Electrochemical Doping and Dedoping of Poly (3, 4-Ethylenedioxythiophene)” Synthetic Metals, Elsevier Sequoia, Lausanne, Ch, vol. 113, No. 1/2, 15 ISSN: 0379-6779.

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