Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-24
2005-05-24
Thai, Luan (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S614000, C438S652000, C438S653000, C438S654000
Reexamination Certificate
active
06897141
ABSTRACT:
A solder terminal and a fabrication method thereof are provided. According to one embodiment of the present invention, a solder terminal structure includes an adhesion metal layer formed on an electrode pad of a semiconductor device, a thermal diffusion barrier, a solder bonding layer, and a solder bump formed on upper portion of the solder bonding layer. With the thermal diffusion layer, the characteristic deterioration caused by the probe mark generated on the electrode pad can be prevented during a semiconductor reliability test, and at the same time, material movement between the layers of the electrode pad, the solder bonding layer and the adhesion metal layer can be reduced. Also, by having the thermal diffusion barrier act as a solder dam (a layer to confine the melted solder area to prevent the solder from being wetted), an additional deposition or etching process can be omitted.
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Deborah S. Patterson, et al. “Wafer Bumping Technologies-13 A Comparative Analysis of Solder Deposition Processes And Assembly Considerations” pp. 1-15.
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Marger & Johnson & McCollom, P.C.
Ocube Digital Co., Ltd.
Thai Luan
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