Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-11-08
2011-10-18
Chambliss, Alonzo (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S772000, C438S456000
Reexamination Certificate
active
08039950
ABSTRACT:
The invention relates to a cover wafer with a core and with an inside, whereby the inside has one or more annular outer areas, (an) annular area(s), which inwardly adjoin(s) the outer area(s), and has (a) inner area(s), and to a component cover with only one annular outer area on its inside. The invention is characterized in that at least area(s) has/have a buffer layer, which has a wetting angle of <35° for a metallic eutectic solution that melts in a range of >265° C. to 450° C. The invention also relates to a component cover having one of the areas which has said buffer layer in a comparable manner. The invention additionally relates to a wafer component or to a component, which can be inserted using microsystem technology and which has a cover wafer or component cover applied with the aid of a solder material, and to a method for the production thereof.
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Merz Peter
Oldsen Marten
Reinert Wolfgang
Arent & Fox LLP
Chambliss Alonzo
Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung
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