Solder contacts and methods of forming same

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S613000, C438S618000, C438S615000

Reexamination Certificate

active

07745321

ABSTRACT:
An integrated circuit that comprises a substrate and a structured layer on the substrate. The structured layer comprises an opening to the substrate, a first field and a second field on the substrate, wherein the first field and the second field, at least in part, overlap with the opening. The integrated circuit further comprises a first material in the area of the first field and a second material in the area of the second field. The first material impedes a wetting by a solder material, and the second provides a wetting by the solder material.

REFERENCES:
patent: 5135606 (1992-08-01), Kato et al.
patent: 5587623 (1996-12-01), Jones
patent: 6047044 (2000-04-01), Lehmann et al.
patent: 6191952 (2001-02-01), Jimarez et al.
patent: 6245595 (2001-06-01), Nguyen et al.
patent: 7263769 (2007-09-01), Morimoto et al.
patent: 2003/0001992 (2003-01-01), Kawase et al.
patent: 2004/0092117 (2004-05-01), Suemasu et al.
patent: 2008/0099925 (2008-05-01), Irsigler et al.
patent: 19542043 (1996-08-01), None
patent: 19729596 (1999-01-01), None
patent: 10351924 (2004-06-01), None
patent: 3627856 (2002-05-01), None
patent: 2002158191 (2005-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Solder contacts and methods of forming same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Solder contacts and methods of forming same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solder contacts and methods of forming same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4182334

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.