Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-06-13
2010-10-19
Doan, Theresa T (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S614000, C257S737000
Reexamination Certificate
active
07816248
ABSTRACT:
Disclosed are embodiments of a far back end of the line solder connector and a method of forming the connector that eliminates the use aluminum, protects the integrity of the ball limiting metallurgy (BLM) layers and promotes adhesion of the BLM layers by incorporating a thin conformal conductive liner into the solder connector structure. This conductive liner coats the top of the via filling in any divots in order to create a uniform surface for BLM deposition and to, thereby, protect the integrity of the BLM layers. The liner further coats the dielectric sidewalls of the well in which the BLM layers are formed in order to enhance adhesion of the BLM layers to the well.
REFERENCES:
patent: 6293457 (2001-09-01), Srivastava et al.
patent: 6426557 (2002-07-01), Daubenspeck et al.
patent: 6730982 (2004-05-01), Barth et al.
patent: 2005/0174045 (2005-08-01), Lee et al.
patent: 2007/0232049 (2007-10-01), Edelstein et al.
Economikos Lacrtis
Farooq Mukta G.
Melville Ian D.
Petrarca Kevin S.
Volant Richard P.
Doan Theresa T
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
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