Solder bump with inner core pillar in semiconductor package

Details Solder bump with inner core pillar in semiconductor package Solder bump with inner core pillar in semiconductor package

2007-09-21

2011-10-18

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Bump leads

C257S737000, C257S778000, C257S779000, C257S780000, C257SE23021, C257SE21508, C257SE23069

Reexamination Certificate

active

08039960

ABSTRACT:
An electrical interconnect within a semiconductor device consists of a substrate with a plurality of active devices. A contact pad is formed on the substrate in electrical contact with the plurality of active devices. A passivation layer, first barrier layer, adhesion layer, and seed layer are formed over the substrate. An inner core pillar including a hollow interior is centered over and formed within a footprint of the contact pad. A second barrier layer and a wetting layer are formed over the single cylindrical inner core pillar and hollow interior. A spherical bump is formed around the second barrier layer, wetting layer, and single cylindrical inner core pillar. A footprint of the spherical bump encompasses the footprint of the contact pad. The spherical bump is electrically connected to the contact pad.

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