Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-07-31
2007-07-31
Luu, Chuong A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S108000, C438S637000, C438S613000
Reexamination Certificate
active
10936569
ABSTRACT:
A method for forming a solder bump structure with increased height. A substrate having at least one metal bonding pad thereon is provided. A passivation layer is formed on the substrate, which substantially exposes the metal bonding pad. An under ball metallurgy (UBM) layer is formed on the exposed metal bonding pad. A dielectric layer and a resist layer are successively formed on the passivation layer, wherein the dielectric layer has a first opening to expose the UBM layer and the resist layer a second opening over the first opening. A solder bump is formed on the UBM layer in the first and second openings, and the resist layer is then removed.
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Advanced Semiconductor Engineering Inc.
Birch & Stewart Kolasch & Birch, LLP
Luu Chuong A.
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