Solder bump structure and laser repair process for memory...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from liquid combined with preceding diverse...

Reexamination Certificate

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C438S478000, C438S612000, C438S614000

Reexamination Certificate

active

06881654

ABSTRACT:
A solder bump structure and laser repair process for memory device include forming a first dielectric layer on a bump pad of a semiconductor wafer. After that, the first dielectric layer is etched to form a contact hole and to expose portions of the bump pad. A second dielectric layer is then formed on a surface of the semiconductor wafer outside of the contact hole. An under bump metallurgy (UBM) process is performed to form a metal layer on a surface of the contact hole, and a solder bump is formed on the metal layer. Finally, the laser repair process for memory device is completed.

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