Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-07-16
2010-10-05
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S687000, C257SE21006, C257SE21237, C257SE21242, C257SE21499, C257SE21508, C257SE21509
Reexamination Certificate
active
07807560
ABSTRACT:
A solder bump forming method of carrying out a reflow treatment over a conductive ball mounted on a plurality of pads, thereby forming a solder bump, includes a metal film forming step of forming a metal film capable of chemically reacting to a tackifying compound on the pads, an organic sticking layer forming step of causing a solution containing the tackifying compound to chemically react to the metal film, thereby forming an organic sticking layer on the metal film, and a conductive ball mounting step of supplying the conductive ball on the pads having the organic sticking layer formed thereon, thereby mounting the conductive ball on the pads through the metal film.
REFERENCES:
patent: 6217987 (2001-04-01), Ono et al.
patent: 6365843 (2002-04-01), Shirai et al.
patent: 7224056 (2007-05-01), Burtzlaff et al.
patent: 7298030 (2007-11-01), McWilliams et al.
patent: 7626829 (2009-12-01), Watanabe et al.
patent: 2006/0237225 (2006-10-01), Kariya et al.
patent: 11-297886 (1999-10-01), None
Enoki Kenjiro
Imafuji Kei
Kodaira Tadashi
Nagata Kinji
Nakazawa Masao
Nhu David
Rankin , Hill & Clark LLP
Shinko Electric Industries Co. Ltd.
LandOfFree
Solder bump forming method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solder bump forming method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solder bump forming method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4223381