Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal
Reexamination Certificate
2005-12-15
2010-06-22
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
C438S057000, C438S069000, C438S071000, C257SE25004, C257SE25007
Reexamination Certificate
active
07741139
ABSTRACT:
A method of manufacturing a solar cell includes forming a diffusion layer on a crystal-type silicon substrate. The diffusion layer has a conductivity opposite to that of the substrate. Furthermore, the method includes etching and removing a part of the diffusion layer by using sodium silicate, and forming a first electrode that makes an electric contact with the diffusion layer and forming a second electrode that makes an electric contact with the substrate.
REFERENCES:
patent: 4137123 (1979-01-01), Bailey et al.
patent: 4322571 (1982-03-01), Stanbery
patent: 2002/0098700 (2002-07-01), Alwan et al.
patent: 2004/0063326 (2004-04-01), Szlufcik et al.
patent: 2005/0126627 (2005-06-01), Hayashida
patent: 100 32 279 (2002-01-01), None
patent: 05-326990 (1993-12-01), None
patent: 11-214722 (1999-08-01), None
“Silicon Etching Pastes for Edge Isolation,” product description for SolarEtch Si, 2004, 3 pages, Merck KGaA, D-64271 Darmstadt, Germany.
German Office Action, with English-Language Translation, dated Nov. 26, 2009.
Buchanan & Ingersoll & Rooney PC
Mitsubishi Denki & Kabushiki Kaisha
Monbleau Davienne
Reames Matthew
LandOfFree
Solar cell manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Solar cell manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Solar cell manufacturing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4250253