Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With physical configuration of semiconductor surface to...
Patent
1996-11-12
1999-09-07
Chapman, Mark
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
With physical configuration of semiconductor surface to...
438745, 438749, 136258, 136261, H01L 2358
Patent
active
059491230
ABSTRACT:
A solar cell comprising multi-crystalline silicon or an alloy thereof, having a surface that is to receive light radiation, wherein said silicon surface includes a multi-tude of pits of depth lying in the range 0.10 .mu.m to 10 .mu.m and of diameter lying in the range 0.1 .mu.m to 10 .mu.m, and in which the ratio of said depth to said diameter is greater than 1, the area of said holes occupying more than half the area of said silicon surface.
REFERENCES:
patent: 5679212 (1997-10-01), Kato et al.
P. Menna et al, "Porous Silicon in Solar Cells: a review and a description of its application as an AR coating", Solar Energy Material and Solar Cells, vol. 37, No. 1 Apr. 1995, Amsterdam NL, pp. 13-24.
E. Vazsonyi et al, "High efficiency silicon pv cells with surface treatment by anodic etching", 13th European Photovoltaic Solar Energy Conference, Oct. 23-27, 1995, pp. 37-40.
Patent Abstracts of Japan, vol. 15, No. 258 (E-1084) Jun. 28, 1991 corresponding to JP-A-03 083339 (Sumitomo Electric Ind. Ltd.) Apr. 9, 1991.
Y. S. Tsuo et al, "Potential application of porous silicon in photovoltaics", 23rd IEEE Phtovoltaic Specialists Conference, May 10-14,1993, Louisville, USA, pp. 287-293.
S. Bastide et al, "The effect of porous silicon on the emitter of a photovoltaic cell", 12th European Photovoltaic Solar Energy Conference, Apr. 11-15, 1994, Amsterdam, NL, pp. 780-783.
Bastide Stephane
Le Quang Nam
Levy-Clement Claude
Sarti Dominique
Chapman Mark
Photowatt International S.A.
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