SOI with conductive metal substrate used as VSS connection

Details SOI with conductive metal substrate used as VSS connection SOI with conductive metal substrate used as VSS connection

1999-10-25

2000-11-28

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, H01L 2701, H01L 2712, H01L 310392

Patent

active

061539120

ABSTRACT:
An SOI transistor structure and SOI circuit is disclosed. The SOI transistor structure includes a conductive base layer and an insulating layer overlying the conductive base layer. A semiconductor layer overlies the insulating layer and includes a source region and a drain region therein with a channel region disposed therebetween. A conductive gate region overlies generally the channel region of the semiconductor layer. The SOI circuit includes a conductive base layer and an insulating layer overlying the conductive base layer. A semiconductor layer overlies the insulating layer. A first circuit structure and a second circuit structure are formed in a first region and second region of the semiconductor layer, respectively. A conductive contact region extends through the insulating layer and electrically connects at least one of the first circuit structure and the second circuit structure to the conductive base layer.

REFERENCES:
patent: 5079607 (1992-01-01), Sakurai
patent: 5314841 (1994-05-01), Brady et al.
patent: 5315144 (1994-05-01), Cherne
patent: 5554870 (1996-09-01), Fitch et al.
patent: 5923067 (1999-07-01), Voldman
patent: 5945712 (1999-08-01), Kim
patent: 6002154 (1999-12-01), Fujita

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