Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2011-08-02
2011-08-02
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S575000, C257S577000, C257S579000, C257S594000, C257SE29027, C438S205000, C438S313000, C438S340000
Reexamination Certificate
active
07989921
ABSTRACT:
An SOI device comprises an isolation trench defining a vertical drift zone, a buried insulating layer to which the isolation trench extends, and an electrode region for emitting charge carriers that is formed adjacent to the insulating layer and that is in contact with the drift zone. The electrode region comprises first strip-shaped portions having a first type of doping and second strip-shaped portions having a second type of doping that is inverse to the first type of doping. A first sidewall doping of the first type of doping is provided at a first sidewall of the isolation trench and a second sidewall doping of the second type of doping is provided at a second sidewall of the isolation trench. The first strip-shaped portions are in contact with the first sidewall doping and the second strip-shaped portions are in contact with the second sidewall doping.
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B. Jayant Baliga; Power Semiconductor Devices; 1995; pp. 178-181; Chapter 4: Power Rectifiers; PWS Publishing Company; Boston, MA; USA.
Lam Cathy N
Nguyen Cuong Q
Stevens & Showalter LLP
X-FAB Semiconductor Foundries AG
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