SOI type MOSFET

Details SOI type MOSFET SOI type MOSFET

2005-04-26

2005-04-26

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S349000, C257S344000, C257S327000, C438S149000, C438S151000, C438S162000, C438S278000, C438S311000, C438S479000

Reexamination Certificate

active

06885066

ABSTRACT:
A buried insulating film is formed in an LDD region between a source region and a drain region, and a non-doped silicon film is formed in the SOI layer above the buried insulating film. The SOI layer lying under the buried insulating film has a body concentration of 1018cm−3.

REFERENCES:
patent: 5965918 (1999-10-01), Ono
patent: 6093592 (2000-07-01), Nakabayashi et al.
patent: 6452232 (2002-09-01), Adan
patent: 63-313865 (1988-12-01), None
patent: 07-211902 (1995-08-01), None
patent: 08-051198 (1996-02-01), None
patent: 2001-135821 (2001-05-01), None
patent: 2001230394 (2001-08-01), None
Lisa T. Su et al., “Optimization of Series Resistance in Sub-0.2 μm SOI MOSFETs”, 1993 IEEE, pp. 723-726.
Neal Kistler et al., “Scaling Behavior of Sub-Micron MOSFETs on Fully Depleted SOI”, Solid-State Electronics vol. 39, No. 4, 1996, pp. 445-454.

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