SOI trench DRAM cell for 256 MB DRAM and beyond

Details SOI trench DRAM cell for 256 MB DRAM and beyond SOI trench DRAM cell for 256 MB DRAM and beyond

1996-06-26

1999-02-09

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257301, 257304, 257305, 257311, H01L 2701, H01L 27108, H01L 2976, H01L 2994

Patent

active

058698680

ABSTRACT:
A trench SOI structure is described. The structure is useful, for instance in the fabrication of DRAM cells. The structure can be fabricated by extending the conventional substrate plate trench cell. The SOI cell eliminates the parasitic trench sidewall leakage, reduces soft error, eliminates well to substrate leakage, in addition to all the other advantages of SOI devices.

REFERENCES:
patent: 4864375 (1989-09-01), Teng et al.

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