SOI substrate manufacturing method

Details SOI substrate manufacturing method SOI substrate manufacturing method

2005-12-14

2008-05-06

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S458000, C438S455000, C257SE21086, C257SE21088

Reexamination Certificate

active

07368332

ABSTRACT:
This invention makes it possible to simplify a process of manufacturing an SOI substrate whose insulator is not exposed to the side surface. The SOI substrate manufacturing method includes a first step of forming a structure (230) in which an insulating layer (204b) and semiconductor layer (203b) are in turn formed on a semiconductor member (211) by bonding a first substrate (210) to a second substrate (220), a second step of making the edge portion of an insulating layer (204b) of the structure (230) retreat toward the center so that the edge portion of a semiconductor layer (203c) overhangs the edge portion of an insulating layer (204c), and a third step of moving atoms which form the edge portion of the semiconductor layer (203c) such that the edge portion of a semiconductor layer (203d) covers the periphery of the insulating layer (204c) and connects to the semiconductor member (211).

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