SOI substrate contact with extended silicide area

Details SOI substrate contact with extended silicide area SOI substrate contact with extended silicide area

2011-05-10

2011-05-10

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S412000, C257S413000, C257S347000, C257S774000, C257SE29156

Reexamination Certificate

active

07939896

ABSTRACT:
A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.

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