SOI substrate and SOI device, and method for forming the same

Details SOI substrate and SOI device, and method for forming the same SOI substrate and SOI device, and method for forming the same

2006-03-31

2008-10-28

Nguyen, Cuong Q (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S479000, C438S480000, C438S517000

Reexamination Certificate

active

07442586

ABSTRACT:
An improved semiconductor-on-insulator (SOI) substrate is provided, which has a substantially planar upper surface and comprises at least first and second patterned buried insulator layers. Specifically, the first patterned buried insulator layer has a first thickness and is located in the SOI substrate at a first depth from the substantially planar upper surface, and the second patterned buried insulator layer has a second, different thickness and is located in the SOI substrate at a second, different depth from the substantially planar upper surface. The first and second patterned buried insulator layers are separated from each other by one or more interlayer gaps, which provide body contacts for the SOI substrate. The SOI substrate of the present invention can be readily formed by a method that includes at least two independent ion implantation steps.

REFERENCES:
patent: 6271566 (2001-08-01), Tsuchiaki
patent: 6528853 (2003-03-01), Christensen et al.
patent: 6876037 (2005-04-01), Wei et al.
patent: 7327008 (2008-02-01), Williams

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