SOI substrate and semiconductor integrated circuit device

Details SOI substrate and semiconductor integrated circuit device SOI substrate and semiconductor integrated circuit device

2007-08-14

2007-08-14

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000, C257S349000, C257S350000, C257S351000

Reexamination Certificate

active

10739166

ABSTRACT:
A semiconductor IC device includes a base substrate comprising P−-type silicon, a first P+-type silicon layer is provided on the base substrate, and an N+-type silicon layer and a second P+-type silicon layer are provided in the same layer thereon. The impurity concentration of the first P+-type silicon layer and the N+-type silicon layer is higher than that of the base substrate. Also, a buried oxide layer and an SOI layer are provided on the entire upper surface of the N+-type silicon layer and the second P+-type silicon layer. The first P+-type silicon layer is connected to ground potential wiring GND, and the N+-type silicon layer is connected to power-supply potential wiring VDD. Accordingly, a decoupling capacitor, which is connected in parallel to the power supply, is formed between the P+-type silicon layer and the N+-type silicon layer.

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