SOI substrate and method of manufacturing the same

Details SOI substrate and method of manufacturing the same SOI substrate and method of manufacturing the same

2006-11-06

2009-11-10

Lee, Hsien-ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S350000, C257SE21318, C257SE27112, C438S479000, C438S517000

Reexamination Certificate

active

07615823

ABSTRACT:
The SOI substrate includes a supporting substrate, an insulating layer (first insulating layer), another insulating layer (second insulating layer), and a silicon layer (silicon active layer). On a surface of the supporting substrate, which is the surface on the side of the silicon layer, the first insulating layer is provided. On a surface of the silicon layer, which is the surface on the side of the supporting substrate, the second insulating layer is provided. The supporting substrate and the silicon layer are adhered to each other, so that the interface between the first and the second insulating layers constitutes an adhesion plane. The adhesion plane performs as a gettering site in the SOI substrate.

REFERENCES:
patent: 5210056 (1993-05-01), Pong et al.
patent: 5753353 (1998-05-01), Kikuchi
patent: 5773152 (1998-06-01), Okonogi
patent: 6211041 (2001-04-01), Ogura
patent: 2004-199632 (1992-07-01), None
patent: 2004-320050 (2004-11-01), None

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