SOI substrate

Details SOI substrate SOI substrate

2006-08-01

2006-08-01

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S149000, C438S479000, C438S517000

Reexamination Certificate

active

07084459

ABSTRACT:
There is provided an SOI substrate having an SOI structure with an insulating layer and a surface single crystal silicon layer successively formed on a single crystal wafer, the SOI substrate having no pit generation in the SOI layer, being producible at low cost and at high productivity and having excellent gettering capacity, wherein the SOI substrate contains nitrogen and carbon with a nitrogen content of no greater than 1×1016atoms/cm3and a carbon content of no greater than 1×1018atoms/cm3.

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Isao Hamaguchi, et al., “Elimination of square pits on SIMOX wafer by using Nitrogen-doped Cz crystal”, 2000 IEEE International SOI Conference. Proceedings, 2000. 10, pp. 18 to 19.

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