SOI structure with a deep thin oxide layer prepared by ION impla

Details SOI structure with a deep thin oxide layer prepared by ION impla SOI structure with a deep thin oxide layer prepared by ION impla

1994-09-07

1998-01-13

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

437 26, 437 62, H01L 2176

Patent

active

057078998

ABSTRACT:
A process for preparing an SOI structure with a deep thin oxide layer which comprises, in succession, a first ion implantation at an oxygen fluence within the range of 10.sup.15 -10.sup.16 ions/cm.sup.2, thermal treatment at a temperature within the range of 600.degree.-900.degree. C., a second ion implantation at an oxygen fluence within the range of 2.times.10.sup.17 -8.times.10.sup.17 ions/cm.sup.2, and a final thermal treatment at a temperature within the range of 1150.degree.-1400.degree. C.

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