Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2005-11-10
2010-06-22
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21122, C257SE21570, C438S406000, C438S409000, C438S455000, C438S459000, C438S479000, C438S753000
Reexamination Certificate
active
07741193
ABSTRACT:
A semiconductor structure and a method of manufacturing a silicon on insulator (SOI) structure having a silicon germanium (SiGe) layer interposed between the silicon and the insulator. According to one manufacturing method, a first SiGe layer, a silicon layer, and a second SiGe layer are epitaxially grown in sequence over a first substrate, and then an insulating layer is formed on the second SiGe layer. Then, impurity ions are implanted into a predetermined location of the first substrate underlying the first SiGe layer to form an impurity implantation region. A second substrate is bonded to the insulating layer on the first substrate. After the first substrate is separated along the impurity implantation region and removed, the first SiGe layer remaining on the surface of the separated region is removed so that the surface of the silicon layer may be exposed.
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Kamiyama Eiji
Lee Gon-sub
Park Jea-gun
Tomizawa Kenji
Jeagun Park
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Sarkar Asok K
Sumitomo Mitsubishi Silicon Corp.
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