SOI structure comprising substrate contacts on both sides of...

Details SOI structure comprising substrate contacts on both sides of... SOI structure comprising substrate contacts on both sides of...

2007-03-27

2007-03-27

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21193

Reexamination Certificate

active

10543923

ABSTRACT:
Disclosed are an arrangement and a production method for electrically connecting (20) active semiconductor structures (40) in the monocrystalline silicon layer (12) located on the front face of silicon-on-insulator semiconductor wafers (SOI;10) to the substrate (13) located on the rear side and additional structures (13a) that are disposed therein. The electric connection is made through the insulator layer (11).

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Qin Lu, et al., “High Voltage Silicon-on-insulator (SOI) MOSFETs”, Power Semiconductor Devices and ICS, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on Baltimore, MD, USA Apr. 22-24, 1991, New York, NY, USA, IEEE, Us, Apr. 22, 1991, pp. 36-39.

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