SOI SRAM device structure with increased W and full depletion

Details SOI SRAM device structure with increased W and full depletion SOI SRAM device structure with increased W and full depletion

2007-11-20

2007-11-20

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S163000, C257SE21094, C257SE21104

Reexamination Certificate

active

11027853

ABSTRACT:
An SOI device, and a method for producing the SOI device, for use in an SRAM memory having enhanced stability. The SRAM is formed with a wider W and a fully-depleted FET. The wider FET is extended by an expitaxial silicon sidewall, and the performance of the FET is improved.

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