SOI single crystalline chip structure

Details SOI single crystalline chip structure SOI single crystalline chip structure

2005-12-13

2005-12-13

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S355000, C257S356000, C257S358000, C257S360000, C257S371000

Reexamination Certificate

active

06975002

ABSTRACT:
An SOI single crystalline chip structure includes an active device layer for having at least one SOI device placed thereon, a buried oxide layer under the active device layer, a metal layer under the buried oxide layer, and a silicon substrate under the metal layer. At least one through hole passing through the buried oxide layer is disposed at a first predetermined position of the buried oxide layer, and at least one concave hole not passing through the buried oxide layer is disposed at a second predetermined position of the bottom surface of the buried oxide layer.

REFERENCES:
patent: 6670677 (2003-12-01), Choe et al.

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