SOI (silicon on insulator) device and method for fabricating the

Details SOI (silicon on insulator) device and method for fabricating the SOI (silicon on insulator) device and method for fabricating the

1998-11-23

2000-08-29

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438406, 438459, 438977, H01L 2176

Patent

active

061107697

ABSTRACT:
An SOI device and a method for fabricating the same in which floating body effect is reduced and the performance is thus improved are disclosed, the SOI device including a semiconductor substrate; a first buried insualting film formed on the semiconductor substrate; a first conductivity type silicon layer formed on the first buried insulating film; an active region and a first conductivity type semiconductor layer formed to be isolated on predetermined areas of the first conductivity type silicon layer; second buried insulating films formed to be isolated from one another in the first conductivity type silicon layer to connect the first conductivity type semiconductor layer with the active region through the first conductivity type silicon layer; a gate electrode formed on the active region; impurity region formed in the semiconductor substrate at both sides of the gate electrode; and contact pads formed on the first conductivity type silicon layer.

REFERENCES:
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patent: 5091330 (1992-02-01), Cambou et al.
patent: 5260233 (1993-11-01), Buti et al.
patent: 5521399 (1996-05-01), Chu et al.
patent: 5528054 (1996-06-01), Ipposhi et al.
patent: 5597739 (1997-01-01), Sumi et al.
Terukazu Ohno et al., International Electron Devices Meeting 1995(IEDM 95), pp. 627-630.
H.F. Wei et al., International Electron Devices Meeting 1993 (IEDM 93), pp. 739-742.

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