SOI semiconductor substrate

Details SOI semiconductor substrate SOI semiconductor substrate

1992-03-16

1993-11-30

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257352, 257499, 257506, 437208, 437974, H01L 2701, H01L 3900

Patent

active

052668240

ABSTRACT:
The present invention provides a semiconductor substrate which is formed by bonding wafers together by heat treatment without causing the substrate to be thermally damaged to have thermal strain, separation, cracks, etc. due to the difference in the thermal expansion coefficient of the wafers, and particularly a semiconductor substrate having an SOI structure which can provide a silicon film thin enough to allow various integrated circuits or TFT-LCD to be formed In the present invention, after wafers are bonded temporarily in a low temperature range, one of the wafers is made thin by chemical treatment, then the wafers were bonded fully by heat treatment in a temperature range (where the thermal expansion coefficient of the wafer are not affected) higher than the above low temperature range, and then said one wafer can be made thinner by mechanical grinding or polishing mechano-chemically. Thus according to the present invention, even if a semiconductor substrate is formed by sticking a silicon wafer and a quartz wafer together, damages that will be caused thermally due to thermal expansion can be prevented and a film which is made thin enough required for forming various integrated circuits or TFT-LCD or the like can be easily obtained.

REFERENCES:
patent: 3397278 (1968-08-01), Pomerantz
patent: 3969753 (1976-07-01), Thorsen, Jr. et al.
patent: 4638552 (1987-01-01), Shimbo et al.
patent: 4671846 (1987-06-01), Shimbo et al.
patent: 4897362 (1990-01-01), Delgado et al.
patent: 4962062 (1990-10-01), Uchiyama et al.
patent: 5028558 (1991-07-01), Haisma et al.

Affiliated with

Also associated with

Rating

SOI semiconductor substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SOI semiconductor substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SOI semiconductor substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2098842