SOI Semiconductor devices

Details SOI Semiconductor devices SOI Semiconductor devices

1996-11-18

1998-11-24

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257349, 257354, 438 4, 438 42, 438402, 438404, 438406, 438407, H01L 2900

Patent

active

058411712

ABSTRACT:
In forming an element isolating region in a silicon semiconductor layer of an SOI substrate, a silicon nitride film of a predetermined thickness is deposited over an oxide film formed on a SOI layer. The silicon nitride film is patterned in a design size of active regions, and side walls of a silicon nitride film are formed on the side surfaces of the patterned silicon nitride film. A first LOCOS process is carried out using the nitride film as an oxidation mask. A LOCOS film formed by the first LOCOS process is removed to form narrower concavities under the side walls. Then, another silicon nitride film is deposited, and is removed leaving portions thereof forming the concavities. Then, a second LOCOS process is carried out to form a LOCOS film as an element isolating region. The second LOCOS process uses the oxidation mask having the narrow cavities, so that stress at the boundary of the active region and the element isolation region is reduced, and the growth of bird's beaks can be suppressed.

REFERENCES:
patent: 5315132 (1994-05-01), Yamazaki
patent: 5466630 (1995-11-01), Lur
patent: 5514879 (1996-05-01), Yamazaki
patent: 5517047 (1996-05-01), Linn et al.
Terukazu Ohno et al. "Experimental 0.25-um-Gate Fully Depleted CMOS/SIMOX Process Using a New Two-Step Locos Isolation Techinque," vol. 42 No. 8 Aug. 1995.

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