SOI semiconductor device with low concentration of electric fiel

Details SOI semiconductor device with low concentration of electric fiel SOI semiconductor device with low concentration of electric fiel

1995-06-02

1998-04-14

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257353, 257354, 257401, 257406, 257411, 257618, 257623, 438 29, 438 34, H01L 2701, H01L 2976, H01L 2906, H01L 21265

Patent

active

057395748

ABSTRACT:
A semiconductor device which includes a mesa type silicon film with a source/drain region and a channel region formed therein, a gate oxide film formed on the mesa type silicon film, and a gate electrode provided on the mesa type silicon film through the gate oxide film, wherein an oxide film having a thickness greater than that of the gate film is formed at the top edge section of the mesa type silicon which is present under the gate electrode, as well as a method for manufacturing it.

REFERENCES:
patent: 3690968 (1972-09-01), Fa et al.
patent: 3974515 (1976-08-01), Ipri et al.
patent: 4729006 (1988-03-01), Dally et al.
patent: 4983535 (1991-01-01), Blanchard
patent: 5060035 (1991-10-01), Nishimura et al.
patent: 5340999 (1994-08-01), Takeda et al.
patent: 5381029 (1995-01-01), Eguchi et al.

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