Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2002-10-02
2009-02-03
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S335000, C257S347000, C257SE21618, C257SE21633
Reexamination Certificate
active
07485923
ABSTRACT:
A semiconductor device includes a first insulating layer, a semiconductor layer formed on the first insulating layer, a second insulating layer on a part of the semiconductor layer, and a gate electrode formed on the semiconductor layer through the second insulating layer. The semiconductor layer includes a low concentration region formed under the gate electrode through the second insulating layer, two high concentration regions which are formed in at least upper regions on outer sides of the low concentration region under the gate electrode through the second insulating layer, and have an impurity concentration higher than an impurity concentration of the low concentration region, respectively, and two source/drain regions which are formed in side portions of the high concentration regions to have low concentration region side end portions, respectively. A width of the high concentration region is equal to or less than 30 nm.
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Koh Risho
Ri Jyonu
Saito Yukishige
Takemura Hisashi
Cao Phat X.
Kalam Abul
NEC Corporation
Young & Thompson
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