SOI semiconductor device including a guard ring region

Details SOI semiconductor device including a guard ring region SOI semiconductor device including a guard ring region

2006-02-27

2008-10-07

Garber, Charles D. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S409000, C257SE27112, C257SE29063

Reexamination Certificate

active

07432551

ABSTRACT:
An object is to increase the amount of substrate noise absorbed in a guard ring, and to prevent a malfunction caused by the substrate noise in a semiconductor device including an SOI substrate provided with the guard ring. Then, there is provided a semiconductor device, including: an SOI substrate in which a support substrate10,an insulating layer11,and an SOI layer12are stacked one by one; an element section4provided in one region of the SOI substrate; and a guard ring region8provided around the element section4of the SOI substrate, wherein a first diffusion layer15provided in the SOI layer12of the element section4,and a second diffusion layer26provided in the SOI layer12of the guard ring region8are electrically connected to each other.

REFERENCES:
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patent: 2004/0129977 (2004-07-01), Ohkubo et al.
patent: 2005/0189602 (2005-09-01), Yamamoto et al.
Jean-Pierre Raskin et al., “Substrate Crosstalk Reduction Using SOI Technology”, IEEE Transactions on Electron Devices, vol. 44, No. 12, Dec. 1997, pp. 2252-2261.

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