Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2005-10-25
2005-10-25
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C257S347000
Reexamination Certificate
active
06958282
ABSTRACT:
A semiconductor configuration has a base layer made of semiconductor material and formed, in particular, by a substrate. An insulation layer is arranged above the base layer, and a layer made of monocrystalline silicon adjoins the insulation layer. A passivating substance is present, with the formation of Si—X bonds, in the region of the interface between the insulation layer and the monocrystalline silicon layer. The bond energy of the Si—X bond is greater than the bond energy of an Si—H bond.
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Huttner Thomas
Mahnkopf Reinhard
Wurzer Helmut
Greenberg Laurence A.
Kebede Brook
Locher Ralph E.
Siemens Aktiengesellschaft
Stemer Werner H.
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