Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-02-11
2010-11-30
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C438S164000
Reexamination Certificate
active
07843005
ABSTRACT:
A doped semiconductor region having a same conductivity type as a bottom semiconductor layer is formed underneath a buried insulator layer in a bottom semiconductor layer of a semiconductor-on-insulator (SOI) substrate. At least one conductive via structure is formed, which extends from a interconnect-level metal line through a middle-of-line (MOL) dielectric layer, a shallow trench isolation structure in a top semiconductor layer, and a buried insulator layer to the doped semiconductor region. The shallow trench isolation structure laterally abuts at least one field effect transistor that functions as a radio frequency (RF) switch. During operation, the doped semiconductor region is biased at a voltage that keeps an induced charge layer within the bottom semiconductor layer in a depletion mode and avoids an accumulation mode. Elimination of electrical charges in an accumulation mode during half of each frequency cycle reduces harmonic generation and signal distortion in the RF switch.
REFERENCES:
patent: 5770509 (1998-06-01), Yu et al.
patent: 5994759 (1999-11-01), Darmawan et al.
patent: 6358782 (2002-03-01), Masuda
patent: 6562666 (2003-05-01), Park et al.
patent: 7123898 (2006-10-01), Burgener et al.
patent: 7205190 (2007-04-01), Okihara
patent: 7465639 (2008-12-01), Pelella et al.
patent: 2002/0043686 (2002-04-01), Bolam et al.
patent: 2003/0178622 (2003-09-01), Wei et al.
patent: 2003/0203546 (2003-10-01), Burbach et al.
patent: 2003/0228722 (2003-12-01), Wristers et al.
patent: 2004/0241917 (2004-12-01), Schwan et al.
patent: 2007/0013072 (2007-01-01), Ellis-Monaghan et al.
patent: 2007/0018247 (2007-01-01), Brindle et al.
patent: 2008/0012072 (2008-01-01), Wu et al.
patent: 2008/0171419 (2008-07-01), Wen et al.
patent: 44 41 724 (1996-05-01), None
patent: 2008-042066 (2008-02-01), None
Sato, Y. et al., “Body-Charge-Induced Switching Characteristics in Fully Depleted Silicon-on-Insulator Digital Circuits” Japanese Journal of Applied Physics (2004) pp. 5209-5217, vol. 43(8A).
International Search Report dated Feb. 24, 2010.
Canale Anthony J.
International Business Machines - Corporation
Prenty Mark
Scully, Scott, & Presser, P.C.
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