SOI process for forming a thin film transistor using solid phase

Details SOI process for forming a thin film transistor using solid phase SOI process for forming a thin film transistor using solid phase

1987-02-02

1989-02-28

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG3, 148DIG48, 148DIG90, 148DIG154, 156603, 357 4, 357 41, 437 59, 437 62, 437 82, 437 89, 437101, 437174, 437963, 437973, H01L 21265, H01L 2126

Patent

active

048085464

ABSTRACT:
Of an amorphous Si film, a region to be formed into a lowly doped region such as the channel region of an MOS transistor is covered with a mask and an uncovered region is doped with an impurity. After this, the amorphous Si film is annealed and turned to signal crystal through solid phase epitaxial growth, and the mask itself is used as the electrode of a semiconductor device. By this impurity doping, a large-sized single-crystal Si film can be formed, and the impurity doping can be conducted in self-alignment with the electrode formation to produce a highly integrated semiconductor circuit.

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