SOI-MOS field effect transistor that withdraws excess carrier th

Details SOI-MOS field effect transistor that withdraws excess carrier th SOI-MOS field effect transistor that withdraws excess carrier th

1998-05-04

2000-09-26

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257351, H01L 29786

Patent

active

061246131

ABSTRACT:
A silicon-on-insulator structure in a field effect transistor is formed on an insulation region. A body region of a first conductivity type is selectively formed on an insulation region. A diffusion region of a second conductivity type is selectively formed on the insulation region and in one side of the body region. An isolation layer is selectively formed on the insulation region and is bounded with the diffusion region so that the diffusion region is positioned between the body region and the isolation layer. A body contact region of the first conductivity type is selectively formed on the insulation region and is bounded with the isolation layer so that the body contact region is isolated by the isolation layer from the diffusion region. At least a carrier path silicon layer of the first conductivity type is selectively formed on the insulation region so that the carrier path silicon layer extends in contact directly with the body contact region, the diffusion region, the isolation layer and the body region. An anti-silicidation layer made of a material which exhibits no silicidation reaction with a metal under a heat treatment does extend over at least both the selected part of the carrier path silicon layer and a boundary portion of the diffusion region, which is bounded to and in the vicinity of the selected part of the carrier path silicon layer. A silicide layer with the metal is selectively formed so as to be separated from at least the selected part of the carrier path silicon layer, so that the body region and the body contact region are electrically connected to each other through the carrier path silicon layer, and further so that the diffusion region is electrically isolated from the carrier path silicon layer and from the body region as well as from the body contact region, whereby any excess carriers generated in the body region are allowed to be withdrawn through the carrier path silicon layer to the body contact region.

REFERENCES:
patent: 5079605 (1992-01-01), Blake

Affiliated with

Also associated with

Rating

SOI-MOS field effect transistor that withdraws excess carrier th does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SOI-MOS field effect transistor that withdraws excess carrier th, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SOI-MOS field effect transistor that withdraws excess carrier th will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2102321