SOI FET having gate sub-regions conforming to t-shape

Details SOI FET having gate sub-regions conforming to t-shape SOI FET having gate sub-regions conforming to t-shape

1997-04-07

1999-07-06

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257348, 257349, 257354, 257507, H01L 2712

Patent

active

059200936

ABSTRACT:
A semiconductor device (120) is formed in a silicon-on-insulator (SOI) substrate (135). The semiconductor device (120) has a channel region (126) that is controlled by a gate structure (129). The channel region (126) has a doping profile that is essentially uniform where the channel region (126) is under the gate structure (129). This eliminates the parasitic channel region that is common with conventional field effect transistors (FETs) that are formed in SOI substrates. Consequently, the semiconductor device (120) of the present invention does not suffer from the "kink" problem that is common to conventional FET devices.

REFERENCES:
patent: 5001528 (1991-03-01), Bahraman
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5656844 (1997-08-01), Klein et al.

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