Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-17
2006-10-17
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S351000, C257SE27112, C257SE21561, C438S149000, C438S479000
Reexamination Certificate
active
07122863
ABSTRACT:
A semiconductor-on-insulator (SOI) device. The SOI device includes an SOI wafer including an active layer, a substrate and a buried insulation layer disposed therebetween. The buried insulation layer includes an oxide trap region disposed along an upper surface of the buried insulation layer, the oxide trap region having a plurality of oxide traps to promote carrier recombination.
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Claims from U.S. Appl. No. 09/850,392; filed May 7, 2001.
An Xilin Judy
En William G.
Ju Dong-Hyuk
Krishnan Srinath
Advanced Micro Devices , Inc.
Fourson George
Maldonado Julio J.
Renner , Otto, Boisselle & Sklar, LLP
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