SOI Device with charging protection and methods of making same

Details SOI Device with charging protection and methods of making same SOI Device with charging protection and methods of making same

2006-07-17

2008-08-19

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S349000

Reexamination Certificate

active

07414289

ABSTRACT:
The present invention is directed to an SOI device with charging protection and methods of making the same. In one illustrative embodiment, a device is formed on an SOI substrate including a bulk substrate, a buried insulation layer and an active layer. The device includes a transistor formed in an isolated portion of the active layer, the transistor including a gate electrode and a source region. The device further includes a first conductive bulk substrate contact extending through the active layer and the buried insulation layer, the first conductive bulk substrate contact being conductively coupled to the source region and the bulk substrate, and a second conductive bulk substrate contact extending through the active layer and the buried insulation layer, the second conductive bulk substrate being conductively coupled to the gate electrode and the bulk substrate.

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patent: 2004/0241917 (2004-12-01), Schwan et al.
patent: 2346260 (2000-08-01), None
patent: WO02/073667 (2002-09-01), None

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