SOI device with body contact self-aligned to gate

Details SOI device with body contact self-aligned to gate SOI device with body contact self-aligned to gate

2007-05-01

2007-05-01

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S221000, C257SE21546

Reexamination Certificate

active

10905708

ABSTRACT:
A region of a semiconductor wafer is converted to an SOI structure by etching a set of isolation trenches for each transistor active area and oxidizing the sidewalls of the trenches to a depth that leaves a pillar of semiconductor that forms a body contact extending from the active area downward to the bulk semiconductor. A self-aligned gate is then formed above the body contact.

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