SOI device having a buried layer of reduced resistivity

Details SOI device having a buried layer of reduced resistivity SOI device having a buried layer of reduced resistivity

1995-06-07

1997-04-15

Whitehead, Jr., Carl

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

257347, 257505, 257526, H01L 2900, H01L 2701

Patent

active

056212399

ABSTRACT:
In a semiconductor device, first and second substrates are supported with respective first major surfaces in opposing, parallel and spaced relationship. A conductor layer of low resistivity material is provided on a selected one of the opposing and spaced major surfaces, in intimate contact and spaced from the opposed major surface of the other substrate. An active device is formed in the first substrate with a region electrically connected to the conductor layer. A contact region is exposed at the second major surface of the first substrate and extends through the first substrate and into electrical contact with the conductor layer.

REFERENCES:
patent: 4864377 (1989-09-01), Widdershoven
patent: 5095351 (1992-03-01), Gotou
patent: 5113236 (1992-05-01), Arnold et al.
patent: 5280188 (1994-01-01), Iwasaki

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