SOI contact structures

Details SOI contact structures SOI contact structures

2004-01-30

2009-02-03

Menz, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S471000, C257S306000

Reexamination Certificate

active

07485926

ABSTRACT:
Disclosed are an arrangement and a production method for electrically connecting active semiconductor structures in or on a monocrystalline silicon layer (12) located on the front face (V) of silicon-on-insulator semiconductor wafers (SOI,10) to the substrate (13). The electrical connection (20) is made through an insulator layer (11). A stack of layers (30to32, 70to72) is disposed above the connection piece (20) on the insulator layer (11).

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English Language Abstract of JP 2000-012868.

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