Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-07-03
1998-06-16
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257351, H01L 2701
Patent
active
057675490
ABSTRACT:
An integrated circuit is described incorporating a substrate, a layer of insulator, a layer of silicon having raised mesas and thin regions therebetween to provide ohmic conduction between mesas, electronic devices on the mesas, and interconnection wiring. The invention overcomes the problem of a floating gate due to charge accumulation below the channel of MOS FET's.
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Chen Wei
Sadana Devendra Kumar
Taur Yuan
Crane Sara W.
International Business Machines - Corporation
Trepp Robert M.
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