Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-11-05
2000-08-22
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438607, H01L 2100
Patent
active
061071250
ABSTRACT:
A semiconductor device having areas that are semiconductor on insulator ("SOI") and areas that are bulk, single crystalline semiconductive areas is provided in which conductive spacers may be formed to electrically connect the SOI areas to ground in order to overcome floating body effects that can occur with SOI. Additionally, insulative spacers may be formed on the surface of the conductive spacers to electrically isolate the SOI regions from the bulk regions. A novel method for making both of these products is provided in which the epitaxially grown, single crystalline bulk regions need not be selectively grown, because a sacrificial polishing layer is deposited, is also provided.
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Jaso Mark A.
Mandelman Jack A.
Tonti William R.
Wordeman Matthew R.
International Business Machines - Corporation
Niebling John F.
Walter, Jr. Howard J.
Zarneke David A.
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