Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-06-18
1999-04-13
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 67, H01L 2701, H01L 2712, H01L 310392
Patent
active
058941525
ABSTRACT:
A semiconductor device having areas that are semiconductor on insulator ("SOI") and areas that are bulk, single crystalline semiconductive areas is provided in which conductive spacers may be formed to electrically connect the SOI areas to ground in order to overcome floating body effects that can occur with SOI. Additionally, insulative spacers may be formed on the surface of the conductive spacers to electrically isolate the SOI regions from the bulk regions. A novel method for making both of these products is provided in which the epitaxially grown, single crystalline bulk regions need not be selectively grown, because a sacrificial polishing layer is deposited, is also provided.
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Jaso Mark A.
Mandelman Jack A.
Tonti William R.
Wordeman Matthew R.
International Business Machines - Corporation
Ngo Ngan V.
Walter, Jr. Howard J.
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