SOI-body selective link method and apparatus

Details SOI-body selective link method and apparatus SOI-body selective link method and apparatus

1998-04-22

2000-10-17

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

350401, 350502, 350773, H01L 2972

Patent

active

061336084

ABSTRACT:
A silicon-on-insulator (SOI) structure and method of making the same includes an SOI wafer having a silicon layer of an original thickness dimension formed upon an isolation oxidation layer. At least two p-type bodies of at least two SOI field effect transistors (PFETs) are formed in the silicon layer. At least two n-type bodies of at least two SOI field effect transistors (NFETs) are also formed in the silicon layer. Lastly, an SOI body link is formed in the silicon layer of the SOI wafer adjacent the isolation oxidation layer for selectively connecting desired bodies of either the p-type SOI FETs or the n-type SOI FETs and for allowing the connected bodies to float.

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