Software programmable logic using spin transfer torque...

Details Software programmable logic using spin transfer torque... Software programmable logic using spin transfer torque...

2008-03-26

2010-06-01

Tran, Anh Q (Department: 2819)

Electronic digital logic circuitry

Multifunctional or programmable

Array

C326S038000, C326S039000

Reexamination Certificate

active

07728622

ABSTRACT:
Systems, circuits and methods for software programmable logic using Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) technology are disclosed. Magnetic tunnel junction (MTJ) storage elements can be formed into input planes and output planes. The input planes and output planes can be coupled together to form complex arrays that allow for the realization of logic functions.

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Hosomi et al., “A Novel Nonvolatile Memory with Spin Transfer Torque Magnetoresistive Magnetization Switching: Spin-RAM, ” Proceedings of IEDM Conference (2005), pp. 459-462.

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