Static information storage and retrieval – Systems using particular element – Two magnetic cells per bit
Patent
1986-04-28
1989-02-14
Moffitt, James W.
Static information storage and retrieval
Systems using particular element
Two magnetic cells per bit
365133, G11C 1106
Patent
active
048051462
ABSTRACT:
The sense voltages of an NDRO core memory including two cores per memory bit are increased by using a "soft write" technique wherein one of the two ferrite cores of each memory bit is written into by a smaller write current than the other. This results in a steeper slope toward the knee of the lower part of the hysteresis characteristic of the first core. The steeper slope results in a larger induced voltage for the first core. This increases the difference between the induced voltages of the two cores, thereby increasing the sense voltage to be detected by the sense circuitry.
REFERENCES:
patent: 2876442 (1956-02-01), Disson
patent: 3042905 (1956-12-01), Kosonocky
patent: 3077586 (1959-05-01), Ford, Jr.
patent: 3278915 (1963-02-01), Joseph
patent: 3323114 (1967-05-01), Gebhardt et al.
patent: 3375504 (1968-03-01), Ihara
patent: 3466631 (1969-09-01), Wang
patent: 3493944 (1970-02-01), Kolk, Jr.
1960 International Solid-State Circuits Conference Digest of Technical Papers; Feb. 11, 1960, pp. 58-59; 365-131.
Bruder John F.
Rainwater Sam L.
Moffitt James W.
Quadri Corporation
LandOfFree
Soft write apparatus and method for nondestructive readout core does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Soft write apparatus and method for nondestructive readout core , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Soft write apparatus and method for nondestructive readout core will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1371260