Soft-reference four conductor magnetic memory storage device

Details Soft-reference four conductor magnetic memory storage device Soft-reference four conductor magnetic memory storage device

2005-12-27

2005-12-27

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S157000, C365S173000

Reexamination Certificate

active

06980466

ABSTRACT:
This invention provides a soft-reference four conductor magnetic memory storage device. In a particular embodiment, there are a plurality of parallel electrically conductive first sense conductors and a plurality of parallel electrically conductive second sense conductors. The first and second sense conductors may provide a cross point array or a series connected array. Soft-reference magnetic memory cells are provided in electrical contact with and located and at each intersection. In addition there are a plurality of parallel electrically conductive write rows substantially proximate to and electrically isolated from the first sense conductors. A plurality of parallel electrically conductive write columns transverse to the write rows, substantially proximate to and electrically isolated from the second sense conductors, forming a write cross point array with a plurality of intersections, is also provided. Sense magnetic fields generated by at least one conductor orient the soft-reference layer but do not alter the data stored within the cell. An associated method of use is also provided.

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