Soft passivation layer in semiconductor fabrication

Details Soft passivation layer in semiconductor fabrication Soft passivation layer in semiconductor fabrication

1997-09-30

2000-10-03

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257530, 257209, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

061277215

ABSTRACT:
The use of an etch stop layer to define a terminal via opening to access a device feature after formation of a photosensitive soft-passivation layer. The etch stop layer allows the size of the terminal via opening to be decoupled from the resolution capabilities of current photosensitive soft-passivation layer.

REFERENCES:
patent: 4523372 (1985-06-01), Balda et al.
patent: 4990993 (1991-02-01), Tsurumaru
patent: 5091289 (1992-02-01), Cronin et al.
patent: 5173442 (1992-12-01), Carey
patent: 5187119 (1993-02-01), Cech et al.
patent: 5189506 (1993-02-01), Cronin et al.
patent: 5235205 (1993-08-01), Lippitt, III
patent: 5371047 (1994-12-01), Greco et al.
patent: 5444012 (1995-08-01), Yoshizumi et al.
patent: 5552638 (1996-09-01), O'Connor et al.
patent: 5652182 (1997-07-01), Cleeves
patent: 5710061 (1998-01-01), Cleeves
patent: 5723381 (1998-03-01), Grewal et al.
patent: 5726100 (1998-03-01), Givens
patent: 5754089 (1998-05-01), Chen et al.
patent: 5821160 (1998-10-01), Rodriguez et al.
patent: 5955773 (1999-09-01), Stamper

Affiliated with

Also associated with

Rating

Soft passivation layer in semiconductor fabrication does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Soft passivation layer in semiconductor fabrication, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Soft passivation layer in semiconductor fabrication will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-198469